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UNR521TG0L

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 150mW Surface Mount SMini3-F2
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  • 制造商 Panasonic 供应商
    类型 晶体管-预偏压 无铅/RoHs 符合
    数据手册
    数量
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    制造商 Panasonic 制造商型号 UNR521TG0L
    供应商 供应商型号 UNR521TG0LTR-ND
    类型 晶体管-预偏压
    产品描述 Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 150mW Surface Mount SMini3-F2
    规格参数 数值
    Transistor Type NPN - Pre-Biased
    Current - Collector (Ic) (Max) 100mA
    Voltage - Collector Emitter Breakdown (Max) 50V
    Resistor - Base (R1) (Ohms) 22k
    Resistor - Emitter Base (R2) (Ohms) 47k
    DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
    Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
    Current - Collector Cutoff (Max) 500nA
    Frequency - Transition 150MHz
    Power - Max 150mW
    Mounting Type Surface Mount
    Package / Case SC-85
    Supplier Device Package SMini3-F2
    这里是个提示